HJ350 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6008
Issued Date : 1996.04.12
Revised Date : 2002.04.18
Page No. : 1/3
HJ350
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ350 is designed for line operated audio output amplifier,
switch mode power supply drivers and other switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-252
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 15 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -300 V
BVCEO Collector to Emitter Voltage................................................................................. -300 V
BVEBO Emitter to Base Voltage........................................................................................... -3 V
IC Collector Current....................................................................................................... -500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-300
-
BVCEO
-300
BVEBO
-3
-
ICBO
-
-
IEBO
-
*hFE
30
-
Max.
-
-
-
-100
-100
240
Unit
Test Conditions
V
IC=-100uA, IE=0
V
IC=-1mA, IB=0
V
IE=-0.1mA, IC=0
uA VCB=-300V, IE=0
uA VEB=-3V, IC=0
VCE=-10V, IC=-50mA
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HJ350
HSMC Product Specification