HJ340 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6012-B
Issued Date : 1996.04.12
Revised Date : 2000.11.01
Page No. : 1/3
HJ340
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ340 is designed for line operated audio output amplifier,
switch mode power supply drivers and other switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 15 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 300 V
BVCEO Collector to Emitter Voltage................................................................................. 300 V
BVEBO Emitter to Base Voltage ........................................................................................... 3 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
300
-
BVCEO
300
-
BVEBO
3
-
ICBO
-
-
IEBO
-
-
*hFE
30
-
Max.
-
-
-
100
100
240
Unit
Test Conditions
V
IC=100uA, IE=0
V
IC=1mA, IB=0
V
IE=0.1mA, IC=0
uA VCB=300V, IE=0
uA VEB=3V, IC=0
VCE=10V, IC=50mA
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification