HJ2584 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HJ200204
Issued Date : 1998.04.08
Revised Date : 2002.02.18
Page No. : 1/3
HJ2584
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HJ2584 is designed for use in low voltage and low drop out
regulator applications.
Absolute Maximum Ratings (Ta=25°C)
TO-252
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tcase=25°C)................................................................................ 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -35 V
BVCEO Collector to Emitter Voltage................................................................................... -35 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current............................................................................................................ -10 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCEO
-35
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
2
-
*hFE2
1
15
Max.
-
-10
-20
-2
-1.5
-2
60
60
Unit
Test Conditions
V
IC=-100uA
uA VCB=-20V
uA VCE=-15V
mA VEB=-5V
V
IC=-10A, IB=-10mA
V
IC=-5A, VCE=-1.7V
K
IC=-500mA, VCE=-1.7V
K
IC=-10A, VCE=-1.7V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HJ2584
HSMC Product Specification