HJ1609 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6018-B
Issued Date : 1996.04.15
Revised Date : 2000.11.01
Page No. : 1/3
HJ1609
NPN EPITAXIAL PLANAR TRANSISTOR
Description
• Low frequency high voltage amplifier.
• Complementary pair with HJ1109.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ................................................................................. 1.25 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 160 V
BVCEO Collector to Emitter Voltage................................................................................. 160 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current (DC) .............................................................................................. 100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
160
-
BVCEO
160
-
BVEBO
5
-
ICBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
60
-
*hFE2
30
-
fT
-
140
Cob
-
3.8
Classification Of hFE1
Max.
-
-
-
10
2
1.5
320
-
-
-
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=140V, IE=0
IC=30mA, IB=3mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
60-120
C
100-200
D
160-320
HSMC Product Specification