HJ127 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6017
Issued Date : 1996.04.12
Revised Date : 2003.01.17
Page No. : 1/3
HJ127
PNP EPITAXIAL PLANAR TRANSISTOR
Description
• High DC current gain
• Built-in a damper diode at E-C
Absolute Maximum Ratings (Ta=25°C)
TO-252
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ............................................................................................... -100 V
BVCEO Collector to Emitter Voltage ............................................................................................ -100 V
BVEBO Emitter to Base Voltage ...................................................................................................... -5 V
IC Collector Current ......................................................................................................................... -5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-100
-
BVCEO
-100
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
ICEX
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
*VBE(on)
-
-
*hFE1
1
-
*hFE2
100
-
Cob
-
-
Darlington Schematic
Max.
-
-
-
-10
-2
-10
-2
-4
-4.5
-2.8
12
-
300
Unit
Test Conditions
V
IC=-1mA, IE=0
V
IC=-30mA, IB=0
V
IE=-1mA, IC=0
uA
VCB=-100V, IE=0
mA VEB=-5V, IC=0
uA
VCE=-100V, VBE(off)=-1.5V
V
IC=-4A, IB=-16mA
V
IC=-8A, IB=-80mA
V
IC=-8A, IB=-80mA
V
VCE=-4V, IC=-4A
K
VCE=-4V, IC=-4A
VCE=-4V, IC=-8A
pF
VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
C
B
HJ127
R1
R2
E
HSMC Product Specification