HJ122 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6009
Issued Date : 1996.02.03
Revised Date : 2002.08.13
Page No. : 1/4
HJ122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ122 is designed for use in general purposes and low speed
switching applications.
Features
• High DC current gain
• Built-in a damper diode at E-C
TO-252
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
100
-
BVCEO
100
-
BVEBO
5
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
*VBE(on)
-
-
*hFE1
1
-
*hFE2
100
-
Cob
-
-
Max.
-
-
-
10
10
2
2
4
4.5
2.8
12
-
200
Unit
Test Conditions
V
IC=1mA
V
IC=30mA
V
IE=1mA
uA VCB=100V
uA VCE=50V
mA VEB=5V
V
IC=4A, IB=16mA
V
IC=8A, IB=80mA
V
IC=8A, IB=80mA
V
VCE=4V, IC=4A
K
VCE=4V, IC=4A
VCE=4V, IC=8A
pF VCB=10V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HJ122
HSMC Product Specification