HJ1109 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6019-B
Issued Date : 1996.04.15
Revised Date : 2000.11.01
Page No. : 1/3
HJ1109
PNP EPITAXIAL PLANAR TRANSISTOR
Description
• Low frequency high voltage amplifier.
• Complementary pair with HJ1609.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................. 1.25 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................... -160 V
BVCES Collector to Emitter Voltage ................................................................................ -160 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ...................................................................................................... -100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-160
-
BVCEO
-160
-
BVEBO
-5
-
ICBO
-
-
*VCE(sat)
-
-
VBE
-
-
*hFE1
60
-
*hFE2
30
-
FT
-
140
Cob
-
5.5
Classification Of hFE1
Max.
-
-
-
-10
-2
-1.5
320
-
-
-
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=-10uA, IE=0
IC=-1mA , IB=0
IE=-10uA, IC=0
VCB=-140V, IE=0
IC=-30mA, IB=-3mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
60-120
C
100-200
D
160-320
HSMC Product Specification