HIRF740 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power MOSFET (400V, 10A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200512
Issued Date : 2005.09.01
Revised Date : 2005.09.22
Page No. : 1/4
HIRF740 / HIRF740F
N-Channel Power MOSFET (400V, 10A)
Description
This N-Channel MOSFETs provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance and cost-
effectiveness.
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
Thermal Characteristics
Symbol
Parameter
Rθ_JC
Thermal Resistance
Junction to Case Max.
Rθ_JA
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB 1.71
TO-220FP
3.3
62
Units
°C/W
°C/W
HIRF740 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
123
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
123
HIRF740 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
Drain-Source Voltage
I_D
Drain to Current (Continuous)(V_GS@10V, T_C=25^oC)
Drain to Current (Continuous)(V_GS@10V, T_C=100^oC)
I_DM
Drain to Current (Pulsed)^*1
V_GS
Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
P_D
Derate above 25°C
TO-220AB
TO-220FP
E_AS
I_AR
E_AR
d_v/d_t
T_J,T_stg
T_L
Single Pulse Avalanche Energy^*2
Avalanche Current^*1
Repetitive Avalanche Energy^*1
Peak Diode Recovery^*3
Operating Junction and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1.6mm
from case for 10 seconds
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: V_DD=50V, starting T_j=25°C, L=9.1mH, R_G=25Ω, I_AS=10A
*3: I_SD≤10A, di/dt≤120A/us, V_DD≤V_(BR)DSS, T_J≤150°C
HIRF740, HIRF740F
Value
400
10
6.3
40
±20
74
38
0.59
0.3
520
10
13
4
-55 to 150
300
Units
V
A
A
A
V
W
W/°C
mJ
A
mJ
V/ns
°C
°C
HSMC Product Specification