HI669A Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HI669A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI669A is designed for low frequency power amplifier.
Spec. No. : HE9004
Issued Date : 1998.01.25
Revised Date : 2002.09.16
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
TO-251
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ....................................................................................... 1 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 180 V
BVCEO Collector to Emitter Voltage.................................................................................. 160 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................ 1.5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
180
-
BVCEO
160
-
BVEBO
5
-
ICBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
60
-
*hFE2
30
-
fT
-
140
Cob
-
14
Classification Of hFE1
Max.
-
-
-
10
1
1.5
200
-
-
-
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=1mA
IC=10mA
IC=1mA
VCB=160V
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCE=5V, IC=500mA
VCE=5V, IC=500mA
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
60-120
C
100-200
D
180-320
HI669A
HSMC Product Specification