HI50 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9016
Issued Date : 1996.04.12
Revised Date : 2002.02.26
Page No. : 1/3
HI50
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI50 is designed for line operated audio output amplifier switch
mode power supply drivers and other switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-251
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 500 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current .............................................................................................................. 1 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
500
-
BVCEO
400
-
BVEBO
5
-
ICES
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
30
-
*hFE2
10
-
fT
10
-
Max.
-
-
-
100
200
1
1
1.5
150
-
-
Unit
Test Conditions
V
V
V
uA
uA
mA
V
V
MHz
IC=1mA
IC=30mA
IC=100uA
VCE=500V
VCE=300V
VEB=5V
IC=1A, IB=0.2A
VCE=10V, IC=1A
VCE=10V, IC=0.3A
VCE=10V, IC=1A
VCE=10V, IC=200mA, f=2MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HI50
HSMC Product Specification