HI45H11 Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9006-B
Issued Date : 1994.11.09
Revised Date : 2000.11.01
Page No. : 1/2
HI45H11
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI45H11 is designed for various specific and general purpose
applications, such as: output and driver stages of amplifiers opera-
ting at frequencies from DC to greater than 1MHz;series, shunt and
switching regulators; low and high frequency inverters/converters;
and many others.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
• Maximum Voltages and Currents
BVCEO Collector to Base Voltage ..................................................................................... -80 V
BVCES Collector to Emitter Voltage .................................................................................. -80 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current .......................................................................................................... -10 A
IB Base Current ................................................................................................................... -5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCEO
-80
-
BVCES
-80
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
60
-
*hFE2
40
-
Cob
-
230
fT
-
40
Max.
-
-
-
-10
-50
-1
-1.5
-
-
-
-
Unit
Test Conditions
V
V
V
uA
uA
V
V
pF
MHz
IC=-100mA, IB=0
IC=-1mA, IB=0
IE=-1mA, IC=0
VCB=-80V, IE=0
VEB=-5V, IC=0
IC=-8A, IB=-0.8A
IC=-8A, IB=-0.8A
VCE=-1V, IC=-2A
VCE=-1V, IC=-4A
VCB=-10V
VCE=-10V, IC=-500mA, f=20MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification