HI44H11 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9305-B
Issued Date : 1994.11.09
Revised Date : 2000.11.01
Page No. : 1/3
HI44H11
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI44H11 is designed for various specific and general purpose
applications, such as: output and driver stages of amplifiers opera-
ting at frequencies from DC to greater than 1MHz; series, shunt and
switching regulators; low and high frequency inverters/converters;
and many others.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 20 W
• Maximum Voltages and Currents
BVCEO Collector to Base Voltage ...................................................................................... 80 V
BVCES Collector to Emitter Voltage ................................................................................... 80 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ............................................................................................................ 10 A
IB Base Current .................................................................................................................... 5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCEO
80
-
BVCES
80
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
60
-
*hFE2
40
-
Cob
-
130
fT
-
50
Max.
-
-
-
10
50
1
1.5
-
-
-
-
Unit
Test Conditions
V
V
V
uA
uA
V
V
pF
MHz
IC=30mA, IB=0
IC=1mA, IB=0
IE=1mA, IC=0
VCB=80V, VEB=0
VEB=5V, IC=0
IC=8A, IB=0.4A
IC=8A, IB=0.8A
VCE=1V, IC=2A
VCE=1V, IC=4A
VCB=10V, f=1MHz
VCE=10V, IC=500mA, f=20MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification