HI3669 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9029-B
Issued Date : 1997.11.14
Revised Date : 2000.11.01
Page No. : 1/3
HI3669
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI3669 is designed for using in power amplifier applications,
power switching application.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Tstg Storage Temperature .................................................................................... -55 ~ +150 °C
Tj Junction Temperature ................................................................................................ +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................. 1.25 W
• Maximum Voltages and Currents
BVCBO Collector to Base Breakdown Voltage ................................................................... 80 V
BVCEO Collector to Emitter Breakdown Voltage ................................................................ 80 V
BVEBO Emitter to Base Emitter Breakdown Voltage............................................................ 5 V
IC Collector Current (DC)...................................................................................................... 2 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
80
-
BVCEO
80
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.15
*VBE(sat)
-
0.9
*hFE
300
-
fT
-
100
Cob
-
30
Ton
-
0.2
Tstg
-
1.0
Tf
-
0.2
Max.
-
-
-
1000
1000
0.5
1.2
-
-
-
-
-
-
Unit
Test Conditions
V
V
V
nA
nA
V
V
MHz
pF
uS
uS
uS
IC=100uA
IC=10mA
IE=100uA
VCB=80V
VEB=5V
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCB=10V, f=1MHz
IB1=-IB2=50mA, Duty Cycle≤1%
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification