HI32C Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9002
Issued Date : 1994.03.02
Revised Date : 2002.01.17
Page No. : 1/3
HI32C
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HI32C is designed for use in general purpose amplifier and low
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-251
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ...................................................................................... 15W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................. -100 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current ............................................................................................................. -3 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-100
-
BVCEO
-100
-
ICES
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
25
-
*hFE2
10
-
fT
3
-
Max.
-
-
-20
-50
-1
-1.2
-1.8
-
50
-
Unit
Test Conditions
V
V
uA
uA
mA
V
V
MHz
IC=-1mA, IE=0
IC=-30mA, IB=0
VCE=-100V, VBE=0
VCE=-60V, IB=0
VEB=-5V, IC=0
IC=-3A, IB=-375mA
VCE=-4V, IC=-3A
VCE=-4V, IC=-1A
VCE=-4V, IC=-3A
VCE=-10V, IC=-500mA, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HI32C
HSMC Product Specification