HI13003 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9034
Issued Date : 1999.03.17
Revised Date : 2002.05.08
Page No. : 1/3
HI13003
NPN EPITAXIAL PLANAR TRANSISTOR
Description
These devices are designed for high-voltage, high-speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220V switchmode applications such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay
drivers and Deflection circuits.
TO-251
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
Total Power Dissipation (Ta=25°C) .................................................................................... 1.3 W
• Maximum Voltages and Currents (Ta=25°C)
BVCEV Collector to Emitter Voltage .................................................................................. 700 V
VCEO Collector to Emitter Voltage .................................................................................... 400 V
VEBO Emitter to Base Voltage .............................................................................................. 9 V
IC Collector Current ........................................................................................................... 1.5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCEO
400
-
BVCEV
700
-
IEBO
-
-
ICEV
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VCE(sat)3
-
-
*VBE(sat)1
-
-
*VBE(sat)2
-
-
*hFE1
8
-
*hFE2
5
-
Cob
-
21
Max.
-
-
1
1
0.5
1
3
1
1.2
40
25
-
Unit
Test Conditions
V
IC=10mA
V
IC=1mA, VBE(OFF)=1.5V
mA VEB=9V
mA VCE=700V, VBE(OFF)=1.5V
V
IC=0.5A, IB=0.1A
V
IC=1A, IB=0.25A
V
IC=1.5A, IB=0.5A
V
IC=0.5A, IB=0.1A
V
IC=1A, IB=0.25A
IC=0.5A, VCE=2V
VCE=2V, IC=1A
pF VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HI13003
HSMC Product Specification