HI122 Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 2000.11.01
Page No. : 1/2
HI122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI122 is designed of general purpose and low speed switching
applications.
Features
• High DC current gain
• Bult-in a damper diode at E-C
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature .............................................................................................. -55~+150°C
Junction Temperature ......................................................................................................+150°C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ...................................................................................... 20W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ............................................................................................................. 8 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
100
-
BVCEO
100
-
BVEBO
5
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
*VBE(on)
-
-
*hFE1
1K
-
*hFE2
100
-
Cob
-
130
Max.
-
-
-
10
10
2
2
4
4.5
2.8
12K
-
-
Unit
Test Conditions
V
IC=1mA
V
IC=30mA
V
IE=1mA
uA VCB=100V
uA VCE=50V
mA VEB=5V
V
IC=4A, IB=16mA
V
IC=8A, IB=80mA
V
IC=8A, IB=80mA
V
VCE=4V, IC=4A
VCE=4V, IC=4A
VCE=4V, IC=8A
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification