HI112 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9033
Issued Date : 1998.07.01
Revised Date : 2002.01.11
Page No. : 1/4
HI112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI112 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-251
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ..................................................................................... 25 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 100 V
VCEO Collector to Emitter Voltage .................................................................................... 100 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current .............................................................................................................. 4 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
100
-
BVCEO
100
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(on)
-
-
*VBE(sat)
-
-
*hFE1
500
-
*hFE2
1
-
*hFE3
200
-
Cob
-
-
Max.
-
-
10
20
2
2
3
2.8
4
-
12
-
100
Unit
Test Conditions
V IC=1mA
V IC=30mA
uA VCB=80V
uA VCE=50V
mA VEB=5V
V IC=2A, IB=8mA
V IC=4A, IB=40mA
V IC=2A, VCE=4V
V IC=4A, IB=80mA
IC=0.5A, VCE=3V
K IC=2A, VCE=3V
IC=4A, VCE=3V
pF VCB=10V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HI112
HSMC Product Specification