HE9018 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6120
Issued Date : 1992.08.25
Revised Date : 2002.02.07
Page No. : 1/3
HE9018
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE9018 is designed for use in AM/FM if amplifier and local
oscillator of FM/VHF tuner.
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature .......................................................................................... -55 °C +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 30 V
VCEO Collector to Emitter Voltage ...................................................................................... 15 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ......................................................................................................... 50 mA
IB Base Current ................................................................................................................ 10 mA
Characteristics (Ta=25°C)
Symbol
Min.
BVCBO
30
BVCEO
15
BVEBO
5
ICBO
-
*VCE(sat)
-
*hFE
39
fT
700
Cob
-
Typ.
-
-
-
-
-
-
1100
1.3
Classification on hFE
Max.
-
-
-
50
0.5
198
-
1.7
Unit
V
V
V
nA
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=100uA
VCB=12V
IC=10mA, IB=1mA
VCE=5V, IC=1mA
VCE=5V, IC=5mA
VCB=10V, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
E
39-60
F
54-80
G
72-108
H
97-146
I
132-198
HE9018
HSMC Product Specification