HE9014 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6102
Issued Date : 1992.08.25
Revised Date : 2002.04.10
Page No. : 1/4
HE9014
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE9014 is designed for use in pre-amplifier of low level and low
noise.
Features
• High Total Power Dissipation (PD: 450mW)
• Complementary to HE9015
• High hFE and Good Linearity
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 450 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 50 V
VCEO Collector to Emitter Voltage ...................................................................................... 45 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
50
-
BVCEO
45
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.14
*VBE(sat)
-
0.84
VBE(on) 0.58
0.63
*hFE
100
280
Cob
-
2.20
fT
150
270
Classification on hFE
Max.
-
-
-
50
50
0.3
1
0.7
1000
3.5
-
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCB=10V, f=1MHz, IE=0
VCE=5V, IC=10mA
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
100-300
C
200-600
D
400-1000
HE9014
HSMC Product Specification