HE9013 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6104
Issued Date : 1992.09.09
Revised Date : 2002.03.06
Page No. : 1/4
HE9013
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE9013 is designed for use in 1W output amplifier of portable radios in
class B push-pull operation.
Features
• High Total Power Dissipation (PT: 625mW)
• High Collector Current (IC: 500mA)
• Complementary to HE9012
• Excellent lnearity
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................. 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage...................................................................................................... 40V
VCEO Collector to Emitter Voltage .................................................................................................. 20V
VEBO Emitter to Base Voltage........................................................................................................... 5V
IC Collector Current .................................................................................................................... 500 mA
Icp Base Current......................................................................................................................... 100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
20
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
VBE(on)
-
-
*hFE1
112
180
*hFE2
40
-
Cob
-
-
fT
100
-
Classification on hFE1
Rank
Range
G
112-166
Max.
-
-
-
100
100
0.6
1.2
0.9
300
-
8
-
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCE=25V, IE=0
VEB=3V, IC=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=500mA
VCB=10V, f=1MHz
VCE=1V, IC=10mA, f=100MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
H
144-202
I1
176-246
I2
214-300
HE9013
HSMC Product Specification