HE8551S Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6119
Issued Date : 1992.11.25
Revised Date : 2001.07.19
Page No. : 1/4
HE8551S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE8551S is designed for general purpose amplifier applications.
Features
• High DC Current gain: 100-400 at IC=150mA
• Complementary to HE8051S
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -25 V
VCEO Collector to Emitter Voltage .................................................................................... -20 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ..................................................................................................... -700 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-25
-
BVCEO
-20
-
BVEBO
-5
-
ICBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
100
-
*hFE2
-
100
fT
150
-
Cob
-
-
Max.
-
-
-
-1
-0.5
-1
500
-
-
10
Unit
Test Conditions
V
V
V
uA
V
V
MHz
PF
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-20V, IE=0
IC=-0.5A, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
hFE1
hFE2
C
100-180
-
C1
100-180
>100
D
160-300
-
D1
160-300
>100
E
250-500
-
HE8551S
HSMC Product Specification