HE8551 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6113-B
Issued Date : 1992.09.30
Revised Date : 2000.09.20
Page No. : 1/3
HE8551
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE8551 is designed for use in 2W output amplifier of portable radios
in class B push-pull operation.
Features
• High Total Power Dissipation (PT: 2W, TC=25°C)
• High Collector Current (IC: 1.5A)
• Complementary to HE8051
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150 °C
Junction Temperature ............................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................................... 1 W
Total Power Dissipation (Tc=25°C) ................................................................................................... 2 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................... -40 V
VCEO Collector to Emitter Voltage................................................................................................. -25 V
VEBO Emitter to Base Voltage......................................................................................................... -6 V
IC Collector Current ...................................................................................................................... -1.5 A
IB Base Current ............................................................................................................................ -0.5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-40
-
BVCEO
-25
-
BVEBO
-6
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
VBE(on)
-
-
*hFE1
45
-
*hFE2
85
-
*hFE3
40
-
fT
100
-
Classification on hFE2
Rank
Range
B
85-160
C
120-200
Max.
-
-
-
-100
-100
-0.5
-1.2
-1
-
500
-
-
D
190-300
Unit
Test Conditions
V
V
V
nA
nA
V
V
V
MHz
IC=-100uA, IE=0
IC=-2mA, IB=0
IE=-100uA, IC=0
VCB=-35V, IE=0
VEB=-6V, IC=0
IC=-0.8A, IB=-80mA
IC=-0.8A, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-5mA
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
VCE=-10V, IC=-50mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
E
250-500
HSMC Product Specification