HE8550S Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6129
Issued Date : 1993.01.15
Revised Date : 2002.03.05
Page No. : 1/4
HE8550S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HE8550S is designed for general purpose amplifier applications.
Features
• High DC Current gain: 100-500 at IC=150mA
• Complementary to HE8050S
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -25 V
VCEO Collector to Emitter Voltage ..................................................................................... -20 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current ...................................................................................................... -700 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-25
-
BVCEO
-20
-
BVEBO
-5
-
ICBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
100
-
*hFE2
-
100
fT
150
-
Cob
-
-
Classification Of hEF
Max.
-
-
-
-1
-0.5
-1
500
-
-
10
Unit
V
V
V
uA
V
V
MHz
pF
Test Conditions
IC=-10uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-20V, IE=0
IC=-0.5A, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
hFE1
hFE2
C
100-180
-
C1
100-180
>100
D
160-300
-
D1
160-300
>100
E
250-500
-
HE8550S
HSMC Product Specification