HE8051S Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HE8051S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HE8051S is designed for general purpose amplifier applications.
Spec. No. : HE6111
Issued Date : 1992.09.30
Revised Date : 2002.03.06
Page No. : 1/4
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 25 V
VCEO Collector to Emitter Voltage ...................................................................................... 20 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ....................................................................................................... 700 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
25
-
BVCEO
20
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
100
-
*hFE2
-
140
fT
150
-
Cob
-
-
Classification Of hFE
Max.
-
-
-
1
100
0.5
1
500
-
-
10
Unit
Test Conditions
V
V
V
uA
nA
V
V
MHz
pF
IC=10uA
IC=1mA
IE=10uA
VCB=20V
VEB=6V
IC=0.5A, IB=50mA
VCE=1V, IC=150mA
VCE=1V, IC=150mA
VCE=1V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
hFE1
hFE2
C
100-180
-
C1
100-180
>100
D
160-300
-
D1
160-300
>100
E
250-500
-
HE8051S
HSMC Product Specification