HDY227 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HDY227
NPN EPITACIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Spec. No. : HE6401-B
Issued Date : 1998.06.21
Revised Date : 2000.09.20
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 30 V
VCEO Collector to Emitter Voltage ..................................................................................... 25 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ....................................................................................................... 300 mA
Characteristics (Ta=25°C)
Symbol
Min.
BVCBO
30
BVCEO
25
BVEBO
5
ICBO
-
IEBO
-
*VCE(sat)
-
*hFE
70
Max.
-
-
-
100
100
400
400
Classification of hFE
Rank
hFE
O
70-140
Y
120-240
Unit
Test Conditions
V
IC=100uA, IE=0
V
IC=10mA, IB=0
V
IE=10uA, IC=0
nA
VCB=25V, IE=0
nA
VEB=3V, IC=0
mV
IC=300mA, IB=30mA
-
IC=50mA, VCE=1V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
G
200-400
HSMC Product Specification