HD45H11 Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6763-B
Issued Date : 1994.11.09
Revised Date : 1999.08.01
Page No. : 1/2
HD45H11
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HD45H11 is designed for various specific and general purpose
applications, such as:output and driver stages of amplifiers
operating at frequencies from DC to greater than 1MHz; series,
shunt and switching regulators; low and high frequency
inverters/converters; and many others.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 50 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ..................................................................................... -80 V
BVCEO Collector to Emitter Voltage.................................................................................. -80 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ........................................................................................................... -10 A
IB Base Current ................................................................................................................... -5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-80
-
BVCEO
-80
-
BVCES
-80
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
100
-
*hFE2
60
-
*hFE3
40
-
Cob
-
230
fT
-
40
Max.
-
-
-
-
-10
-100
-1
-1.5
-
-
-
-
-
Unit
Test Conditions
V
V
V
V
uA
uA
V
V
pF
MHz
IC=-100mA
IC=-100mA
IC=-1mA
IE=-1mA
VCB=-80V
VEB=-5V
IC=-8A, IB=-0.8A
IC=-8A, IB=-0.8A
IC=-250mA, VCE=-1V
IC=-2A, VCE=-1V
IC=-4A, VCE=-1V
VCB=-10V
VCE=-1V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification