HD44H11 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6762
Issued Date : 1994.11.09
Revised Date : 2002.01.15
Page No. : 1/3
HD44H11
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HD44H11 is designed for various specific and general purpose
applications, such as:output and driver stages of amplifiers operating
at frequencies from DC to greater than 1MHz; series, shunt and
switching regulators; low and high frequency inverters/converters;
and many others.
TO-220
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .....................................................................................+150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 50 W
Total Power Dissipation (Ta=25°C) .................................................................................. 1.67 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 80 V
BVCEO Collector to Emitter Voltage.................................................................................... 80 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................. 10 A
IB Base Current ..................................................................................................................... 5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
80
-
BVCEO
80
-
BVCES
80
-
BVEBO
5
-
ICES
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
60
-
*hFE2
40
-
Cob
-
130
fT
-
50
Max.
-
-
-
-
10
100
1
1.5
-
-
-
-
Unit
Test Conditions
V
V
V
V
uA
uA
V
V
pF
MHz
IC=100mA, IB=0
IC=100mA, IB=0
IC=1mA, IC=0
IE=1mA
VCE=80V
VEB=5V
IC=8A, IB=0.4A
IC=8A, IB=0.8A
IC=2A, VCE=1V
IC=4A, VCE=1V
VCB=10V
VCE=1V, IC=500mA, f=100MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HD44H11
HSMC Product Specification