HBU406 Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6716
Issued Date : 1996.02.01
Revised Date : 2001.05.28
Page No. : 1/2
HBU406
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBU406 is designed for use in TV Horizontal output and
Switching applications.
Features
• High Breakdown Voltage
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ..................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 60 W
• Maximum Voltages and Currents (Ta=25°C)
VCEO Collector to Emitter Voltage ................................................................................... 200 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ............................................................................................................. 7 A
IB Base Current .................................................................................................................... 4 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
*BVCEO
200
-
ICES
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
25
-
*hFE2
30
-
*hFE3
10
-
Classification Of hFE2
Max.
-
5
1
1
1.2
-
125
-
Unit
Test Conditions
V
IC=100mA, IB=0
mA VCE=400V
mA VEB=6V, IC=0
V
IC=5A, IB=0.5A
V
IC=5A, IB=0.5A
IC=500mA, VCE=5V
IC=2A, VCE=5V
IC=5A, VCE=5V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
A
30-45
B
35-85
C
75-125
HBU406
HSMC Product Specification