HBF4522D Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN TRIPLE DIFFUSION PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2002.02.20
Page No. : 1/3
HBF4522D
NPN TRIPLE DIFFUSION PLANAR TRANSISTOR
Description
HBF4522D is designed for use in the monitor dynamic focus circuit. It
can be used up to 19" monitor with working frequency as high as
100KHz.
Features
• High Breakdown Voltage
• Low C-E Saturation Voltage
• High Cutoff Frequency
• High Current Gain
TO-126ML
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.5 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 550 V
BVCEO Collector to Emitter Voltage.................................................................................. 550 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current ................................................................................................................ 20 mA
Electrical Characteristics (Ta=25°C)
Symbol
Min. Typ. Max.
BVCEO
550
-
-
BVCBO
550
-
-
BVEBO
7
-
-
ICBO
-
-
1
IEBO
-
-
100
*VCE(sat)
-
0.35
0.5
*hFE
100
150
200
fT
90
-
-
Unit
V
V
V
uA
nA
V
MHz
Test Conditions
IC=1mA
IC=100uA
IE=10uA,
VCB=500V
VEB=5V
IC=30mA, IB=3mA
VCE=20V, IC=30mA
VCE=10V, IE=30mA, ftest=100MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HBF4522D
HSMC Product Specification