HBF423 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HBF423
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Video B-class Power stages in TV-receivers
Spec. No. : HE6403-B
Issued Date : 1993.03.18
Revised Date : 2000.09.20
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 830 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ..................................................................................... -250 V
VCEO Collector to Emitter Voltage .................................................................................. -250 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ....................................................................................................... -50 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-250
-
BVCEO
-250
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*hFE
50
-
fT
60
-
Max.
-
-
-
-100
-10
-0.6
-
-
Unit
Test Conditions
V
V
V
nA
uA
V
MHz
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-200V, IE=0
VEB=-5V, IE=0
IC=-30mA, IB=-3mA
VCE=-20V, IC=-25mA
IE=-10mA, VCE=-10V, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification