HBD438T Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200206
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 1/3
HBD438T
COMPLEMENTARY SILICON POWER TRANSISTORS
Description
The HBD438T is silison epitaxial-base PNP power transistor in TO-126
plastic package, intented for use in medium power linear and switching
applications. The complementary NPN type is HBD437T.
Absolute Maximum Ratings (Ta=25°C)
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICM
IB
PD
Tstg
Tj
Parametor
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (VBE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current
Collector Peak Current (t≤10ms)
Base Current
Total Dissipation at
Tc=25°C
Ta=25°C
Storage Temperature
Max. Operating Junction Temperature
Thermal Data
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Value
-45
-45
-45
-5
-4
-7
-1
25
1.3
-55 to 150
150
Max.
Max.
TO-126
Unit
V
V
V
V
A
A
A
W
W
°C
°C
6
°C/W
96
°C/W
Electrical Characteristics (Ta=25°C, unless otherwise specified)
Symbol
ICBO
ICES
IEBO
*VCEO(sus)
*VCE(sat)
*VBE
*hFE
fT
Parameter
Collector Cut-off Current (IE=0)
Collector Cut-off Current
(VBE=0)
Emitter Cut-off Current (IC=0)
Collector-Emitter Sustaining
Voltage (IB=0)
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
Test Conditions
VCB=-45V
VCE=-45V
VEB=-5V
IC=-100mA
Min. Typ. Max. Unit
-
- -100 uA
-
- -100 uA
-1 mA
-45
-
-
V
IC=-2A, IB=-0.2A
- -0.2 -0.6 V
IC=-10mA,VCE=-5V -
IC=-2A, VCE=-1V
-
IC=-10mA, VCE=-5V 30
IC=-0.5A, VCE=-1V 85
IC=-2A, VCE=-1V
40
IC=-0.25A, VCE=-1V 3
-0.58 -
V
- -1.2 V
130 -
140 -
-
-
-
- MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HBD438T
HSMC Product Specification