HBD437D Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200201
Issued Date : 2001.04.01
Revised Date : 2005.08.16
Page No. : 1/4
HBD437D
COMPLEMENTARY SILICON POWER TRANSISTORS
Description
The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic
package, intented for use in medium power linear and switching applications. The
complementary PNP type is HBD438D.
Absolute Maximum Ratings (T_A=25°C)
Symbol
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CM
I_B
P_D
T_stg
T_J
Parametor
Collector-Base Voltage (I_E=0)
Collector-Emitter Voltage (V_BE=0)
Collector-Emitter Voltage (I_B=0)
Emitter-Base Voltage (I_C=0)
Collector Current
Collector Peak Current (t≤10ms)
Base Current
Total Dissipation at
Storage Temperature
T_C=25°C
T_A=25°C
Max. Operating Junction Temperature
Value
45
45
45
5
4
7
1
20
1.5
-55 to 150
150
TO-126ML
Unit
V
V
V
V
A
A
A
W
W
°C
°C
Thermal Data
R_thj-case
R_thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
5
°C/W
Max.
83
°C/W
Electrical Characteristics (T_A=25°C, unless otherwise specified)
Symbol
I_CBO
I_CES
I_EBO
*V_CEO(sus)
*V_CE(sat)
*V_BE
*h_FE
*h_FE1/h_FE2
f_T
Parameter
Collector Cut-off Current (I_E=0)
Collector Cut-off Current (V_BE=0)
Emitter Cut-off Current (I_C=0)
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Matched Pair
Transition Frequency
Test Conditions
Min. Typ. Max. Unit
V_CB=45V
V_CE=45V
V_EB=5V
I_C=100mA, I_B=0
I_C=2A, I_B=0.2A
I_C=10mA,V_CE=5V
I_C=2A, V_CE=1V
I_C=10mA, V_CE=5V
I_C=0.5A, V_CE=1V
I_C=2A, V_CE=1V
I_C=0.5A, V_CE=1V
I_C=0.25A, V_CE=1V
-
-
100 uA
-
-
100 uA
-
-
1
mA
45
-
-
V
-
0.4 0.6
V
-
0.58
-
V
-
-
1.2
V
30 130
-
85 140
-
40
-
-
-
-
1.4
3
-
-
MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HBD437D
HSMC Product Specification