HBD237 Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6622-A
Issued Date : 1994.09.08
Revised Date : 2000.10.01
Page No. : 1/2
HBD237
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBD237 is designed for medium power linear and switching
applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 25 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................... 80 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
BVCER Emitter to Base Voltage ....................................................................................... 100 V
IC Collector Current .............................................................................................................. 2 A
IC Collector Current (Pulse).................................................................................................. 6 A
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
100
-
-
*BVCEO
80
-
-
BVEBO
5
-
-
ICBO
-
-
100
IEBO
-
-
1
*VCE(sat)
-
-
0.6
*VBE(on)
-
-
1.3
*hFE1
40
-
-
*hFE2
25
-
-
fT
3
-
-
Unit
Test Conditions
V
V
V
uA
mA
V
V
MHz
IC=1mA
IC=100mA
IE=100uA
VCB=100V
VBE=5V
IC=1A, IB=0.1A
IC=1A, VCE=2V
IC=150mA, VCE=2V
IC=1A, VCE=2V
VCE=10V, IC=250mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification