HBD139 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN POWER TRANSISTORS

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2001.08.01
Revised Date : 2001.08.24
Page No. : 1/3
HBD139
NPN POWER TRANSISTORS
Description
PNP power transistor in a TO-126 plastic package. NPN complements:
HBD140
Features
• High Current (max. 1.5A)
• Low Voltage (max. 80V)
Applications
Driver stages in hi-fi amplifiers and television circuits.
Limiting Values
Symbol
Parametor
Conditions
Min.
Max.
Unit
VCBO
Collector-Base Voltage
Open Emitter
-
100
V
VCEO
Collector-Emitter Voltage
Open Base
-
80
V
VEBO
Emitter-Base Voltage
Open Collector
-
5
V
IC
Collector Current (DC)
-
1.5
A
ICM
Peak Collector Current
-
2
A
IBM
Peak Base Current
-
1
A
PD
Total Dissipation at
Ta=25°C
Tc=25°C
-
1.2
W
-
15
W
Tstg
Storage Temperature
-
-65
150
°C
Tj
Junction Temperature
-
-
150
°C
Tamb
Operating Ambient Temperature
-
-65
150
°C
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
ICBO
IEBO
*VCE(sat)
*VBE
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
hFE
DC Current Gain
fT
Transition Frequency
*hFE1/hFE2
DC current gain ratio of
the complementary pairs
Conditions
IE=0, VCB=30V
IC=0, VEB=5V
IC=500mA, IB=50mA
IC=500mA, VCE=2V
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA,
IC=50mA, VCE=5V, f=100MHz
|IC|=150mA, |VCE|=2V
Min. Typ. Max. Unit
-
- 100 nA
-
- 100 nA
-
- 0.5 V
-
-
1V
40 -
-
-
63 - 250 -
25 -
-
-
- 240 - MHz
- 0.9 1.6 -
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HBD139
HSMC Product Specification