HBD136 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP POWER TRANSISTORS

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2001.08.01
Revised Date : 2001.08.24
Page No. : 1/3
HBD136
PNP POWER TRANSISTORS
Description
PNP power transistor in a TO-126 plastic package. NPN complements:
HBD135
Features
• High Current (max. 1.5A)
• Low Voltage (max. 80V)
Applications
General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits.
Limiting Values
Symbol
Parametor
Conditions
Min.
Max.
Unit
VCBO
Collector-Base Voltage
Open Emitter
-
-45
V
VCEO
Collector-Emitter Voltage
Open Base
-
-45
V
VEBO
Emitter-Base Voltage
Open Collector
-
-5
V
IC
Collector Current (DC)
-
-1.5
A
ICM
Peak Collector Current
-
-2
A
IBM
Peak Base Current
-
-1
A
PD
Total Dissipation at
Ta=25°C
Tc=25°C
-
1.2
W
-
15
W
Tstg
Storage Temperature
-
-65
150
°C
Tj
Junction Temperature
-
-
150
°C
Tamb
Operating Ambient Temperature
-
-65
150
°C
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
ICBO
IEBO
*VCE(sat)
*VBE
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
hFE
DC Current Gain
fT
Transition Frequency
*hFE1/hFE2
DC current gain ratio of
the complementary pairs
Conditions
IE=0, VCB=-30V
IC=0, VEB=-5V
Min. Typ. Max. Unit
-
- -100 nA
-
- -100 nA
IC=-500mA, IB=-50mA
-
- -0.5 V
IC=-500mA, VCE=-2V
-
VCE=-2V, IC=-5mA
40
VCE=-2V, IC=-150mA
63
VCE=-2V, IC=-500mA,
25
IC=-50mA, VCE=-5V, f=100MHz -
- -1 V
-
-
-
- 250 -
-
-
-
230 - MHz
|IC|=150mA, |VCE|=2V
- 1 1.6 -
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HBD136
HSMC Product Specification