HBC848 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6843
Issued Date : 1994.07.29
Revised Date : 2002.10.24
Page No. : 1/3
HBC848
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC848 is designed for switching and AF amplifier amplification
suitable for automatic insertion in thick and thin-film circuits.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature .......................................................................................... -55 to +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 30 V
VCEO Collector to Emitter Voltage...................................................................................... 30 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
30
-
BVCEO
30
-
BVEBO
5
-
ICBO
-
-
*VCE(sat)1
-
90
*VCE(sat)2
-
200
*VBE(sat)1
-
700
*VBE(sat)2
-
900
VBE(on)1
580
-
VBE(on)2
-
-
*hFE
110
-
fT
-
300
Cob
-
3.5
Max.
-
-
-
15
250
600
-
-
700
770
800
-
6
Unit
Test Conditions
V
V
V
nA
mV
mV
mV
mV
mV
mV
MHz
pF
IC=100uA
IC=1mA
IE=10uA
VCB=30V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
hFE
A
110-220
B
200-450
C
420-800
HBC848
HSMC Product Specification