HBC817 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6831
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 1/3
HBC817
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBC817 is designed for switching and AF amplifier amplification
suitable for driver stages and low power output stages.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature .......................................................................................... -55 to +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCES Collector to Base Voltage ......................................................................................... 50 V
VCEO Collector to Emitter Voltage...................................................................................... 45 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current ....................................................................................................... 800 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCEO
45
-
BVCES
50
-
BVEBO
5
-
ICES
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE
100
-
fT
-
100
Cob
-
-
Max.
-
-
-
100
100
700
1.2
630
-
12
Unit
Test Conditions
V
V
V
nA
nA
mV
V
MHz
pF
IC=10mA
IC=100uA
IE=100uA
VCE=25V
VEB=4V
IC=500mA, IB=50mA
VCE=1V, IC=300mA
VCE=1V, IC=100mA
VCE=5V, IC=10mA. f=100MHz
VCB=10V, f=1.0MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
hFE
8FA(16)
100-250
8FB(25)
160-400
8FC(40)
250-630
HBC817
HSMC Product Specification