HBC807 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6830
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 1/3
HBC807
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HBC807 is designed for switching and AF amplifier amplification
suitable for driver stages and low power output stages.
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature .......................................................................................... -55 to +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCES Collector to Base Voltage ........................................................................................ -50 V
VCEO Collector to Emitter Voltage..................................................................................... -45 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current....................................................................................................... -800 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCEO
-45
-
BVCES
-50
-
BVEBO
-5
-
ICES
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE
100
-
fT
-
100
Cob
-
-
Max.
-
-
-
-100
-100
-700
-1.2
630
-
12
Unit
Test Conditions
V
V
V
nA
nA
mV
V
MHz
pF
IC=-10mA
IC=-100uA
IE=-100uA
VCE=-25V
VEB=-4V
IC=-500mA, IB=-50mA
VCE=-1V, IC=-300mA
VCE=-1V, IC=-100mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
hFE
9FA(16)
100-250
9FB(25)
160-400
9FC(40)
250-630
HBC807
HSMC Product Specification