HBC327 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6413
Issued Date : 1993.01.15
Revised Date : 2002.02.05
Page No. : 1/4
HBC327
PNP EPITAXIAL PLANAR TRANSISTOR
Description
This HBC327 is designed for driver and output-stages of audio
amplifiers.
Features
• High DC Current Gain: 100-600 at IC=100mA,VCE=1V
• Complementary to HBC337
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -50 V
VCEO Collector to Emitter Voltage ..................................................................................... -45 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current ...................................................................................................... -500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-50
-
BVCEO
-45
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*hFE1
100
-
*hFE2
40
-
*VCE(sat)1
-
-
VBE(on)
-
-
fT
-
100
Cob
-
4
Classification of hFE1
Max.
-
-
-
-100
-100
600
-
-0.7
-1.2
-
-
Unit
Test Conditions
V
V
V
nA
nA
V
V
MHZ
PF
IC=-100uA, IE=0
IC=-10mA, IB=0
IE=-100uA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-100Ma
VCE=-1V, IC=-300mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-300mA,
VCE=-5V, IC=-10mA, f=100MHZ
VCB=-10V, f=1MHZ, IC=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
16
100-250
25
160-400
40
250-600
HBC327
HSMC Product Specification