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HBAT54X Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – Silicon Schottky Barrier Double Diodes
HI-SINCERITY
MICROELECTRONICS CORP.
HBAT54 Series
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2004.08.26
Page No. : 1/4
Description
Silicon Schottky Barrier Double Diodes
• HBAT54: Single Diode, also available as double diodes.
• HBAT54A: Common Anode.
• HBAT54C: Common Cathode.
• HBAT54S: Series Connected.
Features
These diodes feature very low turn-on voltage and fast switching. There is a PN
junction guard ring against excessive voltage such as electronics attic discharges
protects these devices.
SOT-23
Diagram:
3
3
1
2
HBAT54
3
1
2
HBAT54A
3
1
2
HBAT54C
1
2
HBAT54S
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................................................. -65~+125 °C
Junction Temperature .................................................................................................................................... +125 °C
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 230 mW
• Maximum Voltages and Currents (TA=25°C)
Repetitive Peak Reverse Voltage ....................................................................................................................... 30 V
Forward Continuous Current ......................................................................................................................... 200 mA
Repetitive Peak Forward Current ................................................................................................................. 300 mA
Surge Forward Current (tp<1s)...................................................................................................................... 600 mA
Electrical Characteristics (TA=25°C)
Characteristic
Reverse breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Symbol
V(BR)
VF(1)
VF(2)
VF(3)
VF(4)
VF(5)
IR
CT
Reverse Recovery Time
Trr
Condition
IR=10uA
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1V, f=1MHz
IF=IR=10mA, RL=100Ω,
measured at IR=1mA
Min. Max. Unit
30
-
V
-
240
mV
-
320
mV
-
400
mV
-
500
mV
-
1000 mV
-
2.0
uA
-
10
pF
-
5
nS
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification
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