HBAT54 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – Silicon Schottky Barrier Double Diodes

HI-SINCERITY
MICROELECTRONICS CORP.
HBAT54\A\C\S
Spec. No. : HE6854
Issued Date : 1997.04.28
Revised Date : 2002.10.24
Page No. : 1/3
Description
Silicon Schottky Barrier Double Diodes
Features
These diodes feature very low turn-on voltage and fast switching.
There is a PN junction guard ring against excessive voltage such as
electronics attic discharges protects these devices.
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature .............................................................................................. -65~+125 °C
Junction Temperature .................................................................................................... +125 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 230 mW
• Maximum Voltages and Currents (Ta=25°C)
Repetitive Peak Reverse Voltage ........................................................................................ 30 V
Forward Continuous Current .......................................................................................... 200 mA
Repetitive Peak Forward Current .................................................................................. 300 mA
Surge Forward Current (tp<1s)....................................................................................... 600 mA
Characteristics (Ta=25°C)
Characteristic
Reverse breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF(1)
VF(2)
VF(3)
VF(4)
VF(5)
IR
CT
Trr
Condition
IR=10uA
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
VR=25V
VR=1V, f=1MHz
IF=IR=10mA RL=100Ω
measured at IR=1mA
Min. Max. Unit
30
-
V
-
240 mV
-
320 mV
-
400 mV
-
500 mV
- 1000 mV
-
2.0 uA
-
10 pF
-
5
nS
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification