HA8050S Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6116
Issued Date : 1997.09.08
Revised Date : 2002.04.17
Page No. : 1/4
HA8050S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HA8550S is designed for general purpose amplifier applications.
Features
• High DC Current Gain (hFE=100~500 at IC=150mA)
• Complementary to HA8550S
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 25 V
VCEO Collector to Emitter Voltage ...................................................................................... 20 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current........................................................................................................ 700 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
25
-
BVCEO
20
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
100
-
*hFE2
-
170
fT
150
-
Cob
-
-
Classification on hFE
Max.
-
-
-
1
100
0.5
1
500
-
-
10
Unit
V
V
V
uA
nA
V
V
MHz
pF
Test Conditions
IC=10uA
IC=1mA
IE=10uA
VCB=20V
VEB=6V
IC=0.5A, IB=50mA
VCE=1V, IC=150mA
VCE=1V, IC=150mA
VCE=1V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
hFE1
C
100~200
D
150~300
E
250-500
HA8050S
HSMC Product Specification