H9926S Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200508
Issued Date : 2005.08.01
Revised Date : 2005.10.06
Page No. : 1/4
H9926S / H9926CS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
Features
• R_DS(on)=40mΩ@V_GS=2.5V, I_D=5.2A; R_DS(on)=30mΩ@V_GS=4.5V, I_D=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
•
1
2
3
4
8
76
5
8-Lead Plastic SO-8
Package Code: S
H9926S Symbol & Pin Assignment
5
6 _Q1
7
8 _Q2
Pin 1: Source 2
4 _{Pin 2: Gate 2}
3 _{Pin 3: Source 1}
2 ^{Pin 4: Gate 1}
Pin 5 / 6: Drain 1
1 _{Pin 7 / 8: Drain 2}
H9926CS Symbol & Pin Assignment
5
6 _Q1
7
8 _Q2
Pin 1: Source 2
4 _{Pin 2: Gate 2}
3 _{Pin 3: Source 1}
2 Pin 4: Gate 1
1 ^{Pin 5 / 6 / 7 / 8: Drain}
Applications
• Battery Protection
• Load Switch
• Power Management
Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)
Symbol
Parameter
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
R_θJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed) ^*1
Total Power Dissipation @T_A=25^oC
Total Power Dissipation @T_A=75^oC
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient^*2
*1: Maximum DC current limited by the package
*2: 1-in² 2oz Cu PCB board
Ratings
20
±12
6
30
2
1.3
-55 to +150
62.5
Units
V
V
A
A
W
W
°C
°C/W
H9926S, H9926CS
HSMC Product Specification