H9435S Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200509
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
H9435S
P-Channel Enhancement-Mode MOSFET (-30V, -5.3A)
•
8-Lead Plastic SO-8
Package Code: S
Features
• R_DS(on)=60mΩ@V_GS=-10V, I_D=-5.3A
• R_DS(on)=90mΩ@V_GS=-4.5V, I_D=-4.2A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM
H9435S Symbol & Pin Assignment
5
4
6
3 ^{Pin 1 / 2 / 3: Source}
Pin 4: Gate
7
2 _{Pin 5 / 6 / 7 / 8: Drain}
8
1
Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)
Symbol
Parameter
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
R_θJC
R_θJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed) ^*1
Total Power Dissipation @T_A=25^oC
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient (PCB mounted)^*2
*1: Maximum DC current limited by the package
*2: 1-in² 2oz Cu PCB board
Ratings
-30
±20
-5.3
-20
2.5
-55 to +150
30
50
Units
V
V
A
A
W
°C
°C/W
°C/W
H9435S
HSMC Product Specification