H8205 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200904
Issued Date : 2009.02.27
Revised Date : 2010.07.02
Page No. : 1/4
H8205
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
H8205 Symbol & Pin Assignment
4
Q2
5
6
Q1
3
Pin 1: Source 1
Pin 2: Drania 1 & 2
2
Pin 3: Source 2
Pin 4: Gate 2
1
Pin 5: Drania 1 & 2
Pin 6: Gate 1
Features
 R_DS(on)=40m@V_GS=2.5V, I_D=5.2A; R_DS(on)=25m@V_GS=4.5V, I_D=6A
 High Density Cell Design for Ultra Low On-Resistance
 High Power and Current Handing Capability
 Fully Characterized Avalanche Voltage and Current
 Ideal for Li ion Battery Pack Applications
Applications
 Battery Protection
 Load Switch
 Power Management
Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
I_DM
P_D
T_j, T_stg
R_JA
Drain Current
Drain Current (Pulsed) ^*1
Total Power Dissipation @T_A=25^oC
Total Power Dissipation @T_A=75^oC
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient^*2
*1: Maximum DC current limited by the package
*2: 1-in² 2oz Cu PCB board
Ratings
20
8
6
30
2
1.3
-55 to +150
62.5
Units
V
V
A
A
W
W
C
C/W
H8205
HSMC Product Specification