H6968S Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
H6968S / H6968CS
Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A)
•
8-Lead Plastic SO-8
(Battery Switch, ESD Protected)
Package Code: S
Features
• R_DS(on)=32mΩ@V_GS=2.5V, I_D=5.5A
• R_DS(on)=24mΩ@V_GS=4.5V, I_D=6.5A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Li ion Battery Packs Use
• Designed for Battery Switch Appliactions
• ESD Protected
Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current (Continuous)
I_DM
Drain Current (Pulsed) ^*1
Total Power Dissipation @T_A=25^oC
P_D
Total Power Dissipation @T_A=75^oC
T_j, T_stg
R_θJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)^*2
*1: Maximum DC current limited by the package
*2: 1-in² 2oz Cu PCB board
Ratings
20
±12
6.5
30
2
1.3
-55 to +150
62.5
Pin Assignment & Internal Schematic Diagram
Part No.
H6968S
Pin Assignment
S2 1
G2 2
8 D2
7 D2
S1 3
G1 4
6 D1
5 D1
Top View
Internal Schematic Diagram
D1
D2
G1
G2
S1
S2
D
D
S2 1
8D
G2 2
7D
G1
G2
H6968CS
S1 3
6D
G1 4
5D
Top View
S1
S2
Units
V
V
A
A
W
W
°C
°C/W
H6968S, H6968CS
HSMC Product Specification