H603AL Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Logic Level Enhancement Mode Field Effect Transistor

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/5
H603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description
This very high density process has been especially tailored to minimize on-
state resistance and provide superior switching performance. These
devices are particularly suited for low voltage applications such as DC/DC
converters and other battery powered circuits where fast switching, low in-
line power loss, and resistance to transients are needed.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Operating and Storage Temperature ................................................................................ -65 ~ +175 °C
• Maximum Power Dissipation
Total Power Dissipation at Tc=25°C ............................................................................................... 60 W
Derate Above 25°C ................................................................................................................ 0.4 W / °C
• Maximum Voltages and Currents
Drain-Source Voltage ...................................................................................................................... 30 V
Gate-Source Voltage -Continuous................................................................................................ ± 20 V
Drain Current -Continuous .............................................................................................................. 30 A
Drain Current -Pulsed ................................................................................................................... 100 A
Thermal Resistance, Junction-to-Case .................................................................................. 2.5 °C / W
Thermal Resistance, Junction-to-Ambient............................................................................ 62.5 °C / W
Electrical Characteristics
• Off Characteristics
Symbol
BV_DSS
I_DSS
+I_GSS
-I_GSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
• On Characteristics
V_GS(TH) Gate Threshold Voltage
R_DS(on) Static Drain-Source On-Resistance
I_DS(on) On-State Drain Current
g_FS
Forward Transconductance
• Dynamic Characteristic
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Condition
V_GS=0V, I_D=250uA
V_DS=30V, V_GS=0V
V_GS=20V, V_DS=0V
V_GS=-20V, V_DS=0V
V_DS=V_GS, I_D=250uA
V_DS=V_GS, I_D=10mA
V_GS=10V, I_D=25A
V_GS=4.5V, I_D=10A
V_GS=10V, V_DS=10V
V_GS=4.5V, V_DS=10V
V_DS=10V, I_D=25A
V_DS=15V, V_GS=0V
f=1.0Mhz
Min Typ Max Unit
30 -
-V
-
- 10 uA
-
- 100 nA
-
- -100 nA
1.1 -
1.4 -
3
3
V
-
-
0.018 0.022
0.029 0.040
Ω
60 -
15 -
-
-
A
- 26 - S
- 1100 - pF
- 600 - pF
- 180 - pF
HSMC Product Specification