H2N7002 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – N-CHANNEL TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
H2N7002
N-CHANNEL TRANSISTOR
Description
N-channel enhancement-mode MOS transistor.
Spec. No. : HE6823
Issued Date : 1994.01.25
Revised Date : 2002.10.24
Page No. : 1/4
Absolute Maximum Ratings
SOT-23
Drain-Source Voltage............................................................................................................. 60 V
Drain-Gate Voltage (RGS=1MΩ) ........................................................................................... 60 V
Gate-Source Voltage ........................................................................................................ +/-40 V
Continuous Drain Current (Ta=25°C)(1) ........................................................................... 200 mA
Continuous Drain Current (Ta=100°C)(1) ......................................................................... 115 mA
Pulsed Drain Current (Ta=25°C)(2)................................................................................... 800 mA
Total Power Dissipation (Tc=25°C) .................................................................................. 200 mW
Derate above 25°C ................................................................................................... 0.16 Mw / °C
Storage Temperature ............................................................................................... -55 to 150 °C
Operating Junction Temperature ............................................................................. -55 to 150 °C
Lead Temperature, for 10 second Soldering...................................................................... 260 °C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient ................................................................... 625 °C / W
Characteristics (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Source Leakage Current, Forward
Gate Source leakage Current, Reverse
Zero Gate Voltage Drain Current
On-State Drain Current
Static Drain-Source On-State Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Test Conditions
BVDSS
VGS(th)
IGSS/F
IGSS/R
IDSS
ID(ON)
VDS(ON)
RDS(ON)
G_FS
Ciss
Coss
Crss
VGS=0, ID=10uA
VDS=2.5V, ID=0.25mA
VGS=+20V, VDS=0
VGS=-20V, VDS=0
VDS=60V, VGS=0
VDS>2VDS(ON), VGS=10V
ID=50mA, VGS=5V
ID=500mA, VGS=10V
ID=50mA, VGS=5V
ID=500mA, VGS=10V
VDS>2VDS(ON), ID=200mA
VDS=25V, VGS=0, f=1MHz
(1)The Power Dissipation of the package may result in a continuous drain current.
(2)Pulse Width≤300us, Duty cycle≥2%.
Min Typ. Max Unit
60
-
-
V
1
-
2.5
V
-
- 100 nA
-
- 100 nA
-
-
1
uA
500 -
- mA
-
- 0.375 V
-
- 3.75 V
-
-
7.5 Ω
-
-
7.5 Ω
80
-
- mS
-
-
50 pF
-
-
25 pF
-
-
5
pF
H2N7002
HSMC Product Specification