H2N7000 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – N-CHANNEL ENHANCEMENT MODE TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 1/4
H2N7000
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Description
The H2N7000 is designed for high voltage, high speed applications
such as switching regulators, converters, solenoid and relay drivers.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW
• Maximum Voltages and Currents (Ta=25°C)
BVDSS Drain to Source Voltage......................................................................................... 60 V
BVGSS Gate to Source Voltage ......................................................................................... 40 V
ID Drain Current............................................................................................................. 200 mA
Characteristics (Ta=25°C)
Symbol
Min.
VDSS
60
IDSS
-
±IGSS
-
VGS(th)
0.8
ID(on)
75
RDS(on)
-
VDSS(on)1
-
VDSS(on)2
-
Max.
-
1
±10
3
-
5
2.5
0.4
Unit
Test Conditions
V
ID=10uA, VGS=0
uA VDS=48V
nA VGS=±15V
V
VDS=3V, ID=1mA
mA VGS=4.5V, VDS=10V
Ω
VGS=10V, ID=0.5A
V
VGS=10V, ID=0.5A
v
VGS=4.5V, ID=75mA
H2N7000
HSMC Product Specification