H2N6718L Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6218
Issued Date : 1992.11.25
Revised Date : 2001.04.24
Page No. : 1/4
H2N6718L
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6718L is designed for general purpose medium power
amplifier and switching applications.
Features
• High Power: 850mW
• High Current: 1A
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 850 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 100 V
VCEO Collector to Emitter Voltage ................................................................................... 100 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current (Continue) ............................................................................................ 1 A
IC Collector Current (Pulse).................................................................................................. 2 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
100
-
BVCEO
100
-
BVEBO
5
-
ICBO
-
-
*VCE(sat)
-
-
*hFE1
80
-
*hFE2
50
-
*hFE3
20
-
fT
50
-
Cob
-
-
Classification Of hFE2
Rank
Range
A
50-115
Max.
-
-
-
100
350
-
300
-
-
20
Unit
Test Conditions
V
V
V
nA
mV
MHz
pF
IC=100uA
IC=1mA
IE=10uA
VCB=80V
IB=35mA, IC=350mA
VCE=1V, IC=50mA
VCE=1V, IC=250mA
VCE=1V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
B
95-300
H2N6718L
HSMC Product Specification